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| Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Features * High transition frequency fT * SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing Unit: mm 0.2+0.1 -0.05 3 1 0.15+0.1 -0.05 0.80.1 1.60.15 Absolute Maximum Ratings Ta = 25C 5 1 (0.5) (0.5) 1.00.1 1.60.1 2 (0.4) Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -30 -20 -5 -30 125 125 -55 to +125 Unit V 0 to 0.1 (0.3) 0.450.1 V V mA mW C C 1: Base 2: Emitter 3: Collector EIAJ: SC-75 SSMini3-G1 Package Marking Symbol: E Electrical Characteristics Ta = 25C 3C Parameter Base-emitter saturation voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Symbol VBE ICBO ICEO IEBO hFE VCE(sat) fT NF Zrb Cre Conditions VCE = -10 A, IC = -1 mA VCB = -10 V, IE = 0 VCE = -20 V, IB = 0 VEB = -5 V, IC = 0 VCE = -10 V, IC = -1 mA IC = -10 mA, IB = -1 mA VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 1 mA, f = 5 MHz VCB = -10 V, IE = 1 mA, f = 2 MHz VCB = -10 V, IE = 1 mA, f = 10.7 MHz Min Typ - 0.7 0.750.15 Max - 0.1 -100 -10 0.20.1 Unit V A A A V MHz 70 - 0.1 150 300 2.8 22 1.2 220 Collector-emitter saturation voltage Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance (Common emitter) 4.0 60 2.0 dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE B 70 to 140 C 110 to 220 Publication date: March 2003 SJC00031BED 1 2SA1790 PC Ta 150 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 -30 Collector power dissipation PC (mW) 125 -25 Collector current IC (mA) 100 -20 IB = -250 A -200 A -10 75 -15 -150 A -100 A -50 A -1 Ta = 75C 25C -25C 50 -10 - 0.1 25 -5 0 0 0 40 80 120 160 0 -2 -4 -6 -8 -10 - 0.01 - 0.1 -1 -10 -100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE IC 120 VCE = -10 V Ta = 75C 600 fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 6 VCB = -10 V Ta = 25C Cob VCB f = 1 MHz IE = 0 Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 100 500 5 80 25C -25C 400 4 60 300 3 40 200 2 20 100 1 0 - 0.1 -1 -10 -100 0 0.1 1 10 100 0 - 0.1 -1 -10 -100 Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V) Cre VCE Common emitter reverse transfer capacitance Cre (pF) 5 IC = -1 mA f = 10.7 MHz Ta = 25C GP IC 24 VCE = -10 V f = 100 MHz Ta = 25C 5 NF IE VCB = -10 V f = 100 MHz Ta = 25C 4 20 4 16 3 Noise figure NF (dB) -1 -10 -100 Power gain GP (dB) 3 12 2 2 8 1 4 1 0 -1 -10 -100 0 - 0.1 0 0.1 1 10 Collector-emitter voltage VCE (V) Collector current IC (mA) Emitter current IE (mA) 2 SJC00031BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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